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1
Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors
Wiley
Sadao Adachi
phys
figure
solid
alloy
appl
semiconductor
experimental
alloys
gaxin1
gaas
obtained
alxga1
equation
versus
optical
adachi
electron
lattice
values
shown
xas
calculated
shows
circles
linear
semiconductors
determined
energies
dependence
temperature
measured
bowing
effective
parameters
grown
xte
absorption
reported
binary
egx
interpolation
parameter
spectra
ternary
sixge1
composition
phonon
thermal
inas
endpoint
Anno:
2009
Lingua:
english
File:
PDF, 4.40 MB
I tuoi tag:
0
/
0
english, 2009
2
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors (Wiley Series in Materials for Electronic & Optoelectronic Applications)
Wiley
Sadao Adachi
,
Peter Capper
,
Safa Kasap
,
Arthur Willoughby
phys
figure
solid
alloy
appl
semiconductor
experimental
alloys
gaxin1
gaas
obtained
alxga1
equation
versus
optical
adachi
electron
lattice
values
shown
xas
calculated
shows
circles
linear
semiconductors
determined
energies
dependence
temperature
measured
bowing
effective
parameters
grown
xte
absorption
reported
binary
egx
interpolation
parameter
spectra
ternary
sixge1
composition
phonon
thermal
inas
endpoint
Anno:
2009
Lingua:
english
File:
PDF, 5.22 MB
I tuoi tag:
0
/
0
english, 2009
3
Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors
Wiley
Sadao Adachi
,
Peter Capper
,
Safa Kasap
,
Arthur Willoughby
phys
figure
solid
alloy
appl
semiconductor
experimental
alloys
gaxin1
gaas
obtained
alxga1
equation
versus
optical
adachi
electron
lattice
values
shown
xas
calculated
semiconductors
shows
circles
linear
determined
energies
dependence
temperature
measured
bowing
effective
parameters
xte
grown
absorption
reported
binary
egx
interpolation
parameter
spectra
ternary
sixge1
composition
phonon
thermal
inas
endpoint
Anno:
2009
Lingua:
english
File:
PDF, 10.15 MB
I tuoi tag:
0
/
0
english, 2009
4
Определение концентрации Ge в эпитаксиальных пленках SixGe1-x/Si методом Оже-спектроскопии: Описание лабораторной работы
ННГУ им. Н.И. Лобачевского
Максимов Г.А.
,
Николичев Д.Е.
,
Канышина М.В.
оже
электронов
рис
поверхности
образца
спектроскопии
пучка
электронной
выхода
энергии
эос
анализа
поз
электроны
метод
спектра
элемента
энергий
анализ
линии
методом
состава
энергия
образец
спектр
ток
электронного
вторичных
метода
помощью
спектре
15б
атомов
вэу
линий
рассеяния
рфэс
химического
методы
напряжение
твердого
глубина
диаметр
ионного
коэффициент
обработки
пушки
травления
анализатора
зависит
Anno:
2002
Lingua:
russian
File:
PDF, 1.35 MB
I tuoi tag:
0
/
0
russian, 2002
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